cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 1/9 MTB06N03I3 cystek product specification n-channel enhancement mode power mosfet MTB06N03I3 bv dss 30v i d 75a r ds(on) @v gs =10v, i d =30a 4.5m (typ) r ds(on) @v gs =5v, i d =24a 7.3m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package & halogen-free package symbol outline MTB06N03I3 to-251 g d s g gate d drain s source absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 75 continuous drain current @ t c =100c i d 47 pulsed drain current (note 1) i dm 200 avalanche current i as 53 a avalanche energy @ l=0.1mh, i d =53a, r g =25 e as 140 repetitive avalanche energy@ l=0.05mh (note 2) e ar 40 mj total power dissipation @ t c =25 50 pd w total power dissipation @ t c =100 20 operating junction and storage temp erature range tj, tstg -55~+150 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1%
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 2/9 MTB06N03I3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 110 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a v gs(th) 1 1.5 3 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =24v, v gs =0v i dss - - 25 a v ds =20v, v gs =0v, tj=125 c - 4.5 6 v gs =10v, i d =30a *r ds(on) - 7.3 9.5 m v gs =5v, i d =24a *g fs - 28 - s v ds =5v, i d =24a dynamic *qg(v gs =10v) - 53 - *qg(v gs =5v) - 26 - *qgs - 7 - *qgd - 12 - nc i d =30a, v ds =15v, v gs =10v *t d(on) - 26 - *tr - 12 - *t d(off) - 54 - *t f - 18 - ns v ds =15v, i d =25a, v gs =10v, r gs =2.7 ciss - 2811 - coss - 316 - crss - 276 - pf v gs =0v, v ds =15v, f=1mhz rg - 1.2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 40 *i sm - - 160 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 30 - ns *qrr - 10 - nc i f =i s , v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTB06N03I3 to-251 (rohs compliant & halogen-free) 80 pcs / tube, 50 tubes / box b06n03
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 3/9 MTB06N03I3 cystek product specification typical characteristics typical output characteristics 0 40 80 120 160 200 240 0246810 v ds , drain-source voltage(v) i d , drain current(a) 5v, 6v,7v,8v,9v,10v v gs =3v v gs =4v v gs =2 v brekdown voltage vs ambient temperature 20 25 30 35 40 45 50 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , drain-source breakdown voltage(v) i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.001 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0 1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , static drain-source on-state resistance(m) v gs =10v, i d =30a v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =30a
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 4/9 MTB06N03I3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , threshold voltage(v) i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 102030405060 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =15v i d =30a maximum safe operating area 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 10 s r ds( on) limit maximum drain current vs case temperature 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a)
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 5/9 MTB06N03I3 cystek product specification typical characteristics(cont.) transient thermal response curves 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=2.5 c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 6/9 MTB06N03I3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c441i3 issued date : 2012.02.13 revised date : page no. : 7/9 MTB06N03I3 cystek product specification to-251 dimension marking: inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.250 0.262 6.350 6.650 i 0.087 0.094 2.200 2.400 b 0.205 0.213 5.200 5.400 j 0.213 0.224 5.400 5.700 c 0.571 0.587 14.500 14.900 k 0.295 0.311 7.500 7.900 d 0.028 0.035 0.700 0.900 l 0.042 0.054 1.050 1.350 e 0.020 0.028 0.500 0.700 m 0.017 0.023 0.430 0.580 f 0.091 typ 2.300 typ n 0.118 ref 3.000 ref g 0.091 typ 2.300 typ s 0.197 ref 5.000 ref h 0.017 0.023 0.430 0.580 t 0.150 ref 3.800 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style: pin 1.gate 2.drain 3.source 3-lead to-251 plastic package cystek packa g e code: i3 b06 n03 product name date code
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